document number: 94603 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 15-sep-08 1 phase control scr, 10 a 16tts..pbf high voltage series vishay high power products description/features the 16tts..pbf high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. the glass passivation technology used has reliable operation up to 125 c junction temperature. typical applications are in input rectification (soft start) and these products are designed to be used with vishay hpp input diodes, switches and ou tput rectifiers which are available in identical package outlines. this product has been designed and qualified for industrial level and lead (pb)-free (?pbf? suffix). note (1) for higher voltage up to 1600 v contact factory product summary v t at 10 a < 1.4 v i tsm 200 a v rrm 800/1200 v (g) 3 2 (a) 1 (k) to-220ab a v aila b le rohs* compliant output current in typical applications applications single-phase bridge three-phase bridge units capacitive input filter t a = 55 c, t j = 125 c, common heatsink of 1 c/w 13.5 17 a major ratings and characteristics parameter test conditions values units i t(av) sinusoidal waveform 10 a i rms 16 v drm /v rrm range (1) 800/1200 v i tsm 200 a v t 10 a, t j = 25 c 1.4 v dv/dt 500 v/s di/dt 150 a/s t j range - 40 to 125 c voltage ratings part number v rrm , maximum peak reverse voltage v v drm , maximum peak direct voltage v i rrm /i drm at 125 c ma 16TTS08PBF 800 800 10 16tts12pbf 1200 1200 * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94603 2 revision: 15-sep-08 16tts..pbf high voltage series vishay high power products phase control scr, 10 a absolute maximum ratings parameter symbol test conditions values units typ. max. maximum average on-state current i t(av) t c = 98 c, 180 conduction, half sine wave 10 a maximum rms on-state current i rms 16 maximum peak, one-cycle, non-repetitive surge current i tsm 10 ms sine pulse, rated v rrm applied 170 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 144 a 2 s 10 ms sine pulse, no voltage reapplied 200 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 2000 a 2 s maximum on-state voltage drop v tm 10 a, t j = 25 c 1.4 v on-state slope resistance r t t j = 125 c 24.0 m threshold voltage v t(to) 1.1 v maximum reverse and direct leakage current i rm /i dm t j = 25 c v r = rated v rrm /v drm 0.5 ma t j = 125 c 10 holding current i h anode supply = 6 v, resistive load, initial i t = 1 a 16TTS08PBF, 16tts12pbf - 100 maximum latching current i l anode supply = 6 v, resistive load 200 maximum rate of rise of off-state voltage dv/dt 500 v/s maximum rate of rise of turned-on current di/dt 150 a/s triggering parameter symbol test conditions values units maximum peak gate power p gm 8.0 w maximum average gate power p g(av) 2.0 maximum peak positive gate current + i gm 1.5 a maximum peak negative gate voltage - v gm 10 v maximum required dc gate current to trigger i gt anode supply = 6 v, resistive load, t j = - 65 c 90 ma anode supply = 6 v, resistive load, t j = 25 c 60 anode supply = 6 v, resistive load, t j = 125 c 35 maximum required dc gate voltage to trigger v gt anode supply = 6 v, resistive load, t j = - 65 c 3.0 v anode supply = 6 v, resistive load, t j = 25 c 2.0 anode supply = 6 v, resistive load, t j = 125 c 1.0 maximum dc gate voltage not to trigger v gd t j = 125 c, v drm = rated value 0.2 maximum dc gate current not to trigger i gd 2.0 ma switching parameter symbol test conditions values units typical turn-on time t gt t j = 25 c 0.9 s typical reverse recovery time t rr t j = 125 c 4 typical turn-off time t q 110
document number: 94603 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 15-sep-08 3 16tts..pbf high voltage series phase contro l scr, 10 a vishay high power products thermal and mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 125 c maximum thermal resistance, junction to case r thjc dc operation 1.3 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ab 16tts08 16tts12
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94603 4 revision: 15-sep-08 16tts..pbf high voltage series vishay high power products phase control scr, 10 a fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 90 95 100 105 110 115 120 125 024681012 30 60 90 120 180 conduction angle average on-state current (a) maximum allowable case temperature (c) 16tts.. series r (dc) = 1.3 c/ w thjc 90 95 100 105 110 115 120 125 0246810121416 dc 30 60 90 120 180 maximum allowable case temperature (c) conduction period average on-state current (a) 16tts.. series r (dc) = 1.3 c/ w thjc 0 2 4 6 8 10 12 14 16 18 01234567891011 rm s li m i t 180 120 90 60 30 conduction angle average on-state current (a) maximum average on-state power loss (w) 16tts.. series t = 1 2 5 c j 0 5 10 15 20 25 0 2 4 6 8 1012141618 dc 180 120 90 60 30 rm s li m i t conduction period average on-state current (a) maximum average on-state power loss (w) 16tts.. series t = 1 2 5 c j 80 100 120 140 160 180 110100 number of equal amplitude half cycle current pulses (n) at any rated load condition and with ra ted v app lied following surg e. initial t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s rrm j peak half sine wave on-state current (a) 16tts ..series 80 100 120 140 160 180 200 0.01 0.1 1 pulse train duration (s) maximum non repetitive surge current pea k ha lf sine wave forwa rd current (a) versus pulse t ra in dura tion. init ial t = 125c no vo ltage reap plied ra t e d v re a p p l i e d j rrm 16tts .. series
document number: 94603 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 15-sep-08 5 16tts..pbf high voltage series phase contro l scr, 10 a vishay high power products fig. 7 - on-state voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics fig. 9 - gate characteristics 1 10 100 1000 012345 t = 2 5 c j t = 125c j instantaneous on-state voltage (v) instantaneous on-state current (a) 16tts.. se rie s 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 squa re wave pulse durat ion (s) thjc steady state value (dc operation) 16tts.. series si n g l e p u l se d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 transient thermal impedance z (c/w) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 (b) (a) rectangular gate pulse (4) (3) (2) (1) instantaneous gate current (a) instantaneous gate voltage (v) t j = 25 c tj = 12 5 c b)recommended load line for vgd igd frequency limited by pg(av) a)recommended load line for ra te d d i/ d t: 10 v, 20 o hms tr = 0.5 s, tp >= 6 s <= 30% ra ted d i/ d t: 10 v, 65 ohms tr = 1 s, tp >= 6 s (1) pgm = 40 , tp = 1 ms (2) pgm = 20 w, t p = 2 ms (3) pgm = 8 w, tp = 5 ms (4) pgm = 4 w, tp = 10 ms tj = - 1 0 c 1 6 tts. . se r i e s
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94603 6 revision: 15-sep-08 16tts..pbf high voltage series vishay high power products phase control scr, 10 a ordering information table 1 - current rating 2 - circuit configuration: 3 - package: 4 5 - voltage code x 100 = v rrm t = single thyristor - type of silicon: t = to-220ab s = converter grade - none = standard production pbf = lead (pb)-free 08 = 800 v 12 = 1200 v 6 note: for higher voltage up to 1600 v contact factory device code 5 13 24 6 16 t t s 12 pbf links to related documents dimensions http://www.vishay.com/doc?95222 part marking information http://www.vishay.com/doc?95225
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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